http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008118082-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac8ea4f652c51209833279712f81831b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2006-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c43b9e345c64a62202703b07c76c3586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14e4494482d5c43b721ec728781bcee2 |
| publicationDate | 2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008118082-A |
| titleOfInvention | Nitride semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To provide a nitride semiconductor device capable of suppressing leak current and frequency dispersion of a control electrode, miniaturizing a chip and reducing on-resistance, and a manufacturing method thereof. A high concentration first nitride semiconductor layer made of an n-type GaN layer, a second nitride semiconductor layer, and a high concentration third nitride semiconductor layer are stacked on a substrate, and a source is formed. A region other than the electrode is removed in a concave shape, and a gate electrode is formed on the side wall and the bottom surface of the exposed second nitride semiconductor layer. A drain electrode connected to the third nitride semiconductor layer from the back surface of the substrate is formed. The source electrode and the gate electrode can also be formed on the microcrystalline GaN layer. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016032014-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102651359-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010034135-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8390027-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009088327-A |
| priorityDate | 2006-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.