http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008117823-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2006-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1686d6be35f000e5b8c788368b17010e |
| publicationDate | 2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008117823-A |
| titleOfInvention | Semiconductor device manufacturing method and electronic device manufacturing method |
| abstract | An object of the present invention is to provide a semiconductor device manufacturing method capable of improving the characteristics of an SOI structure or a semiconductor device having an SOI structure. A SiGe film and a Si film are formed on a silicon substrate, and these films are selectively removed first to form a separation groove reaching the substrate, and a silicon oxide film is formed thereon. Then, at least the side walls of the SiGe film are exposed by removing these films second, and the silicon substrate 1 is formed when the SiGe film is etched from the exposed parts to form a cavity under the Si film. Is immersed in a solution containing hydrofluoric acid, and the SiGe film is etched with a positive potential applied to the SiGe film. Thus, since the Si (or Ge) oxidation step is performed by anodic oxidation, the SiGe film can be removed with a nitric acid-free etchant. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012227276-A |
| priorityDate | 2006-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.