http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008116361-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2006-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_910e66f66ece335618a121858efe1e1c |
| publicationDate | 2008-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008116361-A |
| titleOfInvention | Semiconductor device sorting method and semiconductor device |
| abstract | Kind Code: A1 A semiconductor device selection method and a semiconductor device capable of guaranteeing the withstand voltage performance of an insulating film constituting an SOI structure semiconductor substrate are provided. A low-voltage circuit region having a low-voltage element is surrounded by an insulating isolation trench that reaches an insulating film in a main surface side surface layer portion of a semiconductor layer constituting an SOI structure semiconductor substrate. The high-voltage circuit region 300 having the element 301 is surrounded by the insulating isolation trench 501 reaching the insulating film 20, and the high-voltage side field region f1 surrounded by the innermost insulating isolation trench 501 and the innermost far-away isolation trench 500. By applying an arbitrary voltage between the low voltage side field region f2 surrounded by, a breakdown voltage of the insulating film 20 corresponding to the high voltage side field region f1 and the low voltage side field region f2 is guaranteed. [Selection] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010080803-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102683262-A |
| priorityDate | 2006-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.