http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008112513-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-1202 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-028 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-407 |
filingDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32ea80707b3f4b19bf075a6b9e19bee9 |
publicationDate | 2008-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008112513-A |
titleOfInvention | Semiconductor memory device |
abstract | Leakage current in a standby state is suppressed. In a semiconductor memory device having a plurality of word lines, bit lines, and memory cells arranged at intersections thereof, a word driver circuit for driving the word lines includes a first node and a second node. And a driving PMOS transistor and a driving NMOS transistor, which are connected in series and connected to a third node at the gate, and a word line is connected to a connection node of both transistors. A first voltage or a second voltage lower than the first voltage is applied to the third node, and a first voltage or a second voltage is applied to the first node. Further, a leakage preventing NMOS transistor is provided between the third node and the gate of the driving PMOS transistor, the first voltage being applied to the gate or a voltage in the vicinity thereof. [Selection] Figure 4 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010187162-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8358535-B2 |
priorityDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426135032 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7156993 |
Total number of triples: 21.