| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate |
2007-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31d42e62a0c122bf9152f9dd56c17e33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c287cbad5dac67645af6f1ae77256aa7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6044a2cc73f553239f523e6a3cf50541 |
| publicationDate |
2008-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008112139-A |
| titleOfInvention |
Mask etching plasma reactor with backside optical sensor and multi-frequency control of etching distribution |
| abstract |
A plasma reactor having multiple frequency control of etching parameters is provided. The reactor includes a reactor chamber and a work support in the chamber, the chamber having a ceiling facing the work support, an inductively coupled source power applicator and a capacitively coupled plasma source power applicator. have. The array of optical fibers extends through the support surface of the workpiece support to view the workpiece through its bottom surface. The optical sensor is coupled to the output end of the optical fiber. The reactor further comprises a controller responsive to an optical sensor that adjusts a relative amount of power simultaneously coupled to the plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator. [Selection] Figure 33 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012069921-A |
| priorityDate |
2006-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |