http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008108860-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 2006-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b211829dd6b86fbb0e9a9376acf0da8 |
| publicationDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008108860-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | A method of manufacturing a semiconductor device capable of polishing a metal film by CMP (Chemical Mechanical Polishing) over the entire wafer without excess or deficiency is provided. A method of manufacturing a semiconductor device includes a step S5 of forming a barrier layer 6 on an insulating film 5 provided with a recess 5a, and a barrier layer so that a portion 7a of a metal film 7 is embedded in the recess 5a. 6 includes a step S6 of forming the metal film 7 on the surface 6 and a step S7 of polishing the metal film 6 by CMP so as to leave a part 7a. The barrier layer 6 is formed so that its orientation is uniform over the entire wafer surface of the semiconductor wafer 1. Therefore, the orientation of the metal film 7 is uniform over the entire wafer surface. This is because the crystal structure of the metal film is affected by the surface state of the base material. Since the polishing rate by the CMP method varies depending on the difference in the orientation of the metal film, if the orientation of the metal film 7 is uniform over the entire wafer surface, it is possible to prevent the polishing by the CMP method from being excessive or insufficient. Therefore, the chip yield is improved. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011222963-A |
| priorityDate | 2006-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.