http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008103775-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be92719b856db86c092cc233e9512ca2 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate | 2008-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cecdc6820723d00d2504e7c8c3973597 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1c25f971d7f92eda99853b08d5f798e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85ef215766f940edf232e8503d93269 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0beff31b7a61f7d5d09f27f14eb58e14 |
| publicationDate | 2008-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008103775-A |
| titleOfInvention | Semiconductor light emitting device |
| abstract | A method for manufacturing a GaInNAs surface-emitting semiconductor laser device having improved quality and practical level, a semiconductor light-emitting device, a surface-emitting semiconductor laser device, an optical transmission module, an optical transmission / reception module, Provides optical communication system. In a semiconductor light emitting device in which a semiconductor layer containing Al is provided between a substrate and an active layer containing nitrogen, the semiconductor layer containing Al and the active layer containing nitrogen are made of an organometallic Al raw material and a nitrogen compound raw material, respectively. A GaNAs layer 213 (or GaInNAs layer) is formed between the semiconductor layer 202 containing Al and the active layer 204 containing nitrogen. [Selection] Figure 10 |
| priorityDate | 2001-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.