| abstract |
An object of the present invention is to improve heat dissipation from the surface of a semiconductor device and realize high output operation. A semiconductor device includes a source electrode 105, a drain electrode and a gate electrode 107 formed on and in contact with the barrier layer 104, and at least a part of an upper surface of each electrode on the barrier layer 104. And a passivation film 108 made of a plurality of films that protects the barrier layer 104. The passivation film 108 includes a film made of at least aluminum nitride. [Selection] Figure 5 |