http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008101255-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bfdf49224a405be1f7b653c56ebad94 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-30 |
| filingDate | 2006-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc82386b14853f52157e740541d67e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b47790e96f343a16ffab0eeea3508a11 |
| publicationDate | 2008-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008101255-A |
| titleOfInvention | Etching composition and etching method |
| abstract | An object of the present invention is to provide an etching composition capable of etching ruthenium without using a strong acid as a main component in ruthenium used in electronic devices such as semiconductor devices and flat panel displays. A ruthenium etching composition comprising vanadium and water can etch ruthenium without damaging semiconductor materials other than ruthenium. As vanadium, vanadium halide, metavanadate, vanadium oxyhalide, vanadyl sulfate, etc. are used, and an organic acid or an inorganic acid may be added. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104854216-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014087004-A1 |
| priorityDate | 2006-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 159.