http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008091469-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f6990c82cc830f59821da2df554172e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2006-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e49fc6dbdcc45983b1a7ae1a4ecf6585 |
| publicationDate | 2008-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008091469-A |
| titleOfInvention | Semiconductor manufacturing apparatus, semiconductor manufacturing method, and electronic apparatus |
| abstract | An object of the present invention is to make a thin insulator barrier film dense so as to sufficiently prevent the increase in leakage current. SOLUTION: A means 1031 for forming an insulator barrier film with respect to a wiring connection hole formed in a wafer 7 and a means 3 for irradiating the insulator barrier film with ultraviolet rays are provided. Specifically, a partition plate that partitions between the first region B where the heater 6 on which the wafer 7 is placed is installed and the second region A where the lamp 3 for irradiating the wafer 7 on the heater 6 with ultraviolet rays is installed. 1068 and an electrode 1064 for generating plasma that is disposed in the second region A and performs cleaning. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010103484-A |
| priorityDate | 2006-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.