| abstract |
A pattern forming method capable of forming a high-definition and high-aspect-ratio pattern on a support. A step of forming a lower layer film on a support, a step of forming a silicon hard mask on the lower layer film, and applying a chemically amplified positive resist composition on the hard mask to form a first resist A step of forming a film, a step of selectively exposing and developing the resist film through a first mask pattern to form a first resist pattern, and using the resist pattern as a mask and etching a hard mask to form a first resist pattern. A step of forming one pattern, a step of applying a chemically amplified positive silicon resist composition on the first pattern to form a second resist film, and the resist through the second mask pattern. A step of selectively exposing and developing the film to form a second resist pattern, and a step of forming a second pattern by etching the lower layer film using the resist pattern as a mask Pattern forming method, which comprises a. [Selection figure] None |