http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008088318-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1995ed748107f2d457a60b421ddb315d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-00 |
| filingDate | 2006-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5c27e63e7c2c8d7080d11c7890cd9e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d44c7fe8878fc022d624106f8aecc721 |
| publicationDate | 2008-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008088318-A |
| titleOfInvention | Thermally conductive silicone composition and semiconductor device using the same |
| abstract | The present invention provides a thermally conductive silicone composition that provides a cured product that is excellent in thermal conductivity, low hardness, and hardly generates oil bleed, and a semiconductor device using the same. SOLUTION: (A) Polyorganosiloxane blocked at both ends with dialkoxymonoorganosilyl groups or polyorganosiloxane blocked at both ends with trialkoxysilyl groups, and (B) Dialkoxymonoorgano at one end Total amount of polyorganosiloxane having a silyl group or polyorganosiloxane having a trialkoxysilyl group at one end is 100 parts by weight (however, (A) / (B) = (0 to 95) / (100 to 5 on a weight basis) )) To 1) parts by weight of (C) fatty acid, (D) 0.01 to 10 parts by weight of curing catalyst, (E) 200 to 2000 parts by weight of thermally conductive filler, and after curing The heat conductivity silicone composition characterized by having a thermal conductivity of 2.0 W / (m ยท K) or more, and a semiconductor device using the same. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013042638-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010007804-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8827499-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015183184-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4899137-B2 |
| priorityDate | 2006-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.