| abstract |
【Task】 An abrasive for use in planarization polishing of a copper wiring film in a semiconductor device manufacturing process is provided. A semiconductor device containing abrasive grains (A), cyanuric acid (B1) or a salt thereof (B2), boric acid (C1) or a salt thereof (C2), an oxidizing agent (D), and water (E). Chemical mechanical polishing composition in production. The abrasive grains (A) are metal oxide particles (A1), organic polymer particles (A2), or a combination thereof. Boric acid (C1) is metaboric acid, tetraboric acid, pentaboric acid, octaboric acid, or a combination thereof. The material to be polished is at least one substance selected from the group consisting of copper, aluminum, tungsten, tantalum and alloys thereof, silicon oxide, and a low dielectric constant insulating film. A method for manufacturing a semiconductor device, including a step of polishing a substrate on which a metal wiring, a barrier metal, or an insulating film is formed in a pattern. [Selection figure] None |