| abstract |
An object of the present invention is to solve the problem of performance improvement technology in microfabrication of semiconductor elements using actinic rays or radiation, particularly KrF excimer laser light, electron beam or EUV light, and has high sensitivity, LWR (line width). It is an object to provide a resist composition that satisfies both of (roughness) and density dependency reduction, and has a good dissolution contrast, and a pattern forming method using the same. A resist composition comprising a resin containing a (meth) acrylic repeating unit containing an aromatic group having an acid-decomposable acetal group, and a compound capable of generating an acid upon irradiation with actinic rays or radiation. And pattern formation method. [Selection figure] None |