http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008074703-A

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filingDate 2007-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cc6cc8c8da51487c978b98ba0e41c13
publicationDate 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008074703-A
titleOfInvention Bismuth replacement garnet thick film material
abstract As an alternative material for a TbBi-based garnet thick film exhibiting essential absorption in a wavelength band of about 1.6 μm or more, improved insertion in a wavelength band of 1.5 μm or more in which the influence of an absorption spectrum due to Tb ions appears. To provide a garnet thick film material having a loss and θ f / T and a manufacturing method thereof. A A LPE bismuth substituted garnet thick film materials by methods, and substrate NGG, chemical formula, Gd 3-x-y- z Y x Yb y Bi z Fe 5-a Al a O 12, provided that x = 0 to 0.2, y = 0 to 0.2, and x and y are not simultaneously 0, and z = 0.8 to 1.4 and a = 0.2 to 0.7. A heat treatment is performed that has the composition shown, contains 0 to 3.7 wt% B 2 O 3 , maintains a temperature range of 950 to 1130 ° C., and an oxygen concentration of 5% or more. [Selection] Figure 1
priorityDate 1998-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.