| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_930d026de3a6f8109fa00a85852fe8e4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3277 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3906
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R33-093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R33-098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3909
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39 |
| filingDate |
2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccf4b2830f5f2e056419e7278f20d53e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d16fd7b8a9e3496ccc127554a7081e09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b17a1cfea7955f7006ddc8e54d13df16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a77bb099cb7f718b2aca21f44ef7224a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bba578f54cf3b34d0650aa47086fe32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_245a5ad11f61c1fff33a601d3592a341 |
| publicationDate |
2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008066640-A |
| titleOfInvention |
Tunnel-type magnetic sensing element and manufacturing method thereof |
| abstract |
PROBLEM TO BE SOLVED: To reduce the absolute value of VCR (Voltage Coefficience of Resistivity) when an insulating barrier layer is made of Ti-O, and to ensure low RA and high resistance change rate (ΔR / R). An object of the present invention is to provide a tunnel type magnetic sensing element and a method for manufacturing the same. A Pt layer is formed between a pinned magnetic layer and an insulating barrier layer. When the Pt layer 10 is interposed between the pinned magnetic layer 4 and the insulating barrier layer 5, the barrier height (potential height) and the barrier width (potential width) of the insulating barrier layer 5 change. This can reduce the absolute value of the VCR. Therefore, operational stability can be improved compared to the conventional case. In addition, the flatness of the lower interface (formation surface) of the insulating barrier layer 5 can be appropriately improved, so that a high rate of change in resistance (ΔR / R) can be obtained while maintaining a low RA. It becomes possible. [Selection] Figure 1 |
| priorityDate |
2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |