http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008066471-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2006-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beccf6551ddbb20126b8031d86f34518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f3cf3b570bac99b463348bc00895198 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b5129cab3d531dbf47e3fa8ae1031fc |
| publicationDate | 2008-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008066471-A |
| titleOfInvention | Ferroelectric memory and manufacturing method thereof |
| abstract | A ferroelectric memory with improved retention characteristics and a method for manufacturing the same are provided. In a ferroelectric memory in which an insulator film, a ferroelectric film, and a metal film are sequentially laminated on a semiconductor substrate, the surface of the ferroelectric film is irradiated with neutral radicals. Thus, the modified layer 6 that increases the potential barrier of the ferroelectric film with respect to the metal film is formed at the interface between the ferroelectric film 3 and the metal film 4. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011195348-A |
| priorityDate | 2006-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947 |
Total number of triples: 17.