| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be92719b856db86c092cc233e9512ca2 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2006-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85ef215766f940edf232e8503d93269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0beff31b7a61f7d5d09f27f14eb58e14 |
| publicationDate |
2008-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008053353-A |
| titleOfInvention |
Surface emitting laser array, surface emitting laser element used therefor, and method for manufacturing surface emitting laser array |
| abstract |
A surface-emitting laser array capable of reducing a difference in etching depth in the in-plane direction of a substrate without using a dummy element is provided. A surface emitting laser array includes a plurality of surface emitting laser elements each having a structure of a surface emitting laser element. In the surface emitting laser element 1, the reflective layer 102 is composed of [n-AlAs / n-Al 0.3 Ga 0.7 As] having a period of 40.5, and each of the cavity spacer layers 103 and 105 includes (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P. The active layer 104 has a quantum well structure including a well layer made of GaInPAs and a barrier layer made of Ga 0.6 In 0.4 P. Further, the reflective layer 106 is composed of [p-Al 0.9 Ga 0.1 As / Al 0.3 Ga 0.7 As] with 24 periods. The bottom surface of the mesa structure is located in the middle of the resonator spacer layer 103 that absorbs the difference in etching depth in the reflective layer 106. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9225149-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8971372-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012124821-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2808958-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016127236-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2690725-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103650264-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252567-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023032307-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9496686-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10084286-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9276378-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8937982-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3128628-A1 |
| priorityDate |
2006-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |