http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008045153-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f97f0fa258a008bf056ad04b7f380dda
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-22
filingDate 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0198e18bf9d958e6f3534bce9b0d629d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_800d8512acc71f081b060aa880ad4bb9
publicationDate 2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008045153-A
titleOfInvention ECR sputtering apparatus and film forming method
abstract Film formation is performed that has a good nitriding reaction and is suitable for forming a nitride thin film, and has a high sputtering yield and a high film forming speed. In ECR sputtering, a substrate is irradiated with plasma of a sputtering target, a reactive gas such as nitrogen gas is ionized, and the substrate is irradiated with the ionized reactive gas ions to improve the nitriding reaction. And a high sputtering yield. The ECR sputtering apparatus 1 generates a sputtering target plasma by electron cyclotron resonance, ionizes an ECR sputtering source 2 that irradiates the generated plasma onto the substrate 10, and a supply gas such as a reactive gas, and converts the ionized gas into the substrate 10. Is provided with an ion beam source 3 for irradiating. The substrate 10 is irradiated with sputtering target plasma and ionized gas. [Selection] Figure 1
priorityDate 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 15.