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filingDate 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63ee54286e52e7b32a2c188a187c45d9
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publicationDate 2008-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008044803-A
titleOfInvention Method for producing crystallized metal oxide thin film and use thereof
abstract The present invention provides a method for producing a phosphor thin film material that enables the formation of a thin film containing Y 2 O 3 crystallized on a glass or silicon substrate and has high performance. [Solution] Organic containing at least one rare earth metal element selected from the group consisting of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce Pr, Yb, La, Nd, Lu formed on the substrate A method for producing a crystallized metal oxide thin film, wherein the metal thin film or metal oxide film is crystallized while being kept at a temperature of 250 to 600 ° C. and irradiated with ultraviolet light having a wavelength of 200 nm or less. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009242204-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8586150-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008075073-A
priorityDate 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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