http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008041977-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2006-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21fbe5e3453eb2f2720a35be0cdf5f3e |
| publicationDate | 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008041977-A |
| titleOfInvention | Manufacturing method of semiconductor circuit device |
| abstract | A method of manufacturing a semiconductor circuit device in which a barrier metal having a low resistance value and a uniform thickness is formed. A method of manufacturing a semiconductor circuit device includes a step of forming a plasma-treated first film after forming a TiN film by chemical vapor deposition (CVD) using tetrakisdimethylaminotitanium (TDMAT) as a raw material. I have. Further, in the method of manufacturing a semiconductor circuit device, a TiN film is formed on a first film by chemical vapor deposition (CVD) with a tetrakisdimethylaminotitanium (TDMAT) flow rate of 2 to 5 mg / min. Forming two films. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105386004-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105386004-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5335916-B2 |
| priorityDate | 2006-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.