http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008041965-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 |
| filingDate | 2006-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_038cb559445ead07d8b0130b928fe3e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da474ce13ec9e4559545377391ff0f44 |
| publicationDate | 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008041965-A |
| titleOfInvention | Epitaxial wafer for semiconductor device and manufacturing method thereof |
| abstract | An epitaxial wafer for a semiconductor device and a method for manufacturing the same are provided. An epitaxial wafer for a semiconductor device in which a collector layer (3), a base layer (4), and an emitter layer (5) made of at least a III-V group compound semiconductor are stacked on a substrate (1). The C concentration distribution in the layer (4) is low in the vicinity of the interface with the emitter layer (5). [Selection] Figure 1 |
| priorityDate | 2006-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.