http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008041801-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
filingDate 2006-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_556800313609da54ac320edd47c6482e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6743ab428d9af93282c81651dc838cd7
publicationDate 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008041801-A
titleOfInvention Semiconductor device
abstract A process margin can be increased to improve the quality and reliability of a semiconductor device. In a SIP 10 in which a semiconductor chip 1, an interposer substrate 2 and a semiconductor chip 3 are laminated on a wiring substrate 7, a part of an upper stud bump 2d of the semiconductor chip 1 is formed in a through hole 1e of the semiconductor chip 1. Since the through hole 1e is embedded inside and opens to the outside of the bonding portion 1f of the first electrode pad 1c, it is possible to sufficiently transmit ultrasonic vibration during stud bump bonding. As a result, the stud bump connection that reduces the defective shape and peeling of the stud bump 1d can be secured, the process control when forming the through hole 1e by laser processing or etching processing becomes easy, and the process margin is increased. be able to. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10681256-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I418265-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017204891-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831011-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11153471-B2
priorityDate 2006-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452198021
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57420512

Total number of triples: 21.