http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008021926-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
filingDate 2006-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc9a1b7f12d2d79b0fbf1c23e9eb0fff
publicationDate 2008-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008021926-A
titleOfInvention Method for forming group III-V compound semiconductor layer and method for manufacturing semiconductor optical device
abstract A method for forming a group III-V compound semiconductor layer and a method for manufacturing a semiconductor optical device capable of making the N composition ratio in a group III-V compound semiconductor layer uniform in the layer thickness direction are provided. A method for forming a group III-V compound semiconductor layer includes a group III source gas G1 containing a group III element and an arsenic element on a group III-V compound semiconductor layer 3 containing a group III element and an arsenic element. The process includes a step S3 of forming a group III-V compound semiconductor layer 5 containing a group III element, an arsenic element, and a nitrogen element by supplying an arsenic source gas G2 containing nitrogen and a nitrogen source gas G3 containing nitrogen element. In step S3, before the supply of the nitrogen source gas G3 is started, the step S31 of supplying the supply amount F1 of the arsenic source gas G2 onto the III-V compound semiconductor layer 3 and the supply of the nitrogen source gas G3 are started. And a step S32 of changing the supply amount of the arsenic raw material gas G2 during a period until a predetermined time elapses. [Selection] Figure 2
priorityDate 2006-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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