| abstract |
A magnetoresistive effect element, a magnetic head, and a magnetic disk device capable of improving MR change rate and reliability are provided. As a spacer layer in a magnetoresistive effect element, a first metal layer mainly composed of an element selected from the group consisting of Cu, Au, and Ag is formed, and on the first metal layer, Si, A functional layer mainly composed of an element selected from the group consisting of Hf, Ti, Mo, W, Nb, Mg, Cr, and Zr is formed, and a second metal mainly composed of Al is formed on the functional layer. Forming a layer, and oxidizing, nitriding, and oxynitriding the second metal layer to form an insulating layer and a current confinement layer having a conductor that allows current to pass in a layer direction of the insulating layer. Consists of. [Selection] Figure 2 |