| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dcebf5a7f7ddc3b081f70e8ce1c4097 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2006-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c6de0652387858b0d4072e3d5a51360
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_722aba04721a83427f6b583e7f6a259d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_307c87efa20a42b7e5927c5f7a563905
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_237160dc5bca8889df3488f36901428a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d75fd84a9036b68f9253d76d09dbf1f8 |
| publicationDate |
2008-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008010801-A |
| titleOfInvention |
Source-drain electrode, thin film transistor substrate, manufacturing method thereof, and display device |
| abstract |
Provided is a technique capable of exhibiting excellent TFT characteristics even when a lower barrier metal layer is omitted, and capable of directly and reliably connecting a source-drain wiring to a TFT semiconductor layer. A source-drain electrode of the present invention comprises a nitrogen-containing layer and a pure Al or Al alloy thin film. Nitrogen in the nitrogen-containing layer is bonded to Si of the semiconductor layer 33 of the thin film transistor, and a thin film of pure Al or Al alloy is connected to the semiconductor layer 33 of the thin film transistor through the nitrogen-containing layer. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013012050-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009278057-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7825515-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8299614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010001998-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8546804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010245495-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8535997-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010177621-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009128542-A1 |
| priorityDate |
2005-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |