http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008010508-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
filingDate 2006-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d66ade5f9e366d376fbcc1f630e6919
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c43590c5c75ef368edf7bccb29034ef
publicationDate 2008-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008010508-A
titleOfInvention Magnetic semiconductor memory device, electronic device including the same, and information writing / reading method thereof
abstract To provide a magnetic semiconductor memory device capable of obtaining a large output signal by using a small write current. A magnetic semiconductor memory device according to the present invention is an MRAM that reads recorded information using a tunnel magnetoresistive effect (TMR), and includes two adjacent magnetoresistive elements 4 and 5. These memory elements 4 and 5 form one memory cell. A first bit line 2a, a second bit line 2b, and a word line 3 are connected to the memory cell. With this configuration, for example, when information is written to the magnetoresistive elements 4 and 5, the state of the magnetoresistive elements 4 and 5 is set to high resistance or low resistance, respectively. As a result, a large resistance value can be obtained when information is written in the memory cell, so that a large output signal can be obtained even when a small write current is used. [Selection] Figure 1
priorityDate 2006-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003258208-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336543
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450705782

Total number of triples: 17.