| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26533
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56821adbabb32e32df105392d27d629a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25e16279a853bcd1cb63137dc992c983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_184278c00a1e9c209d03b51ff3b73d69 |
| publicationDate |
2008-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2008004821-A |
| titleOfInvention |
Method for manufacturing bonded wafer |
| abstract |
The present invention provides a method for manufacturing a bonded wafer that can effectively prevent the generation of voids and blisters without the need to increase the thickness of an active layer before thinning even when the thickness of the insulating layer is reduced. When two silicon wafers for an active layer and a support layer are bonded together, the active layer wafer is thinned to produce a bonded wafer. Prior to the bonding, nitrogen ions are implanted from the surface of the active layer wafer to form a nitride layer inside the active layer wafer. [Selection] Figure 2 |
| priorityDate |
2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |