http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008003291-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
filingDate 2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43dcf07eba688c7b93ec043e9601e3fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b47790e96f343a16ffab0eeea3508a11
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publicationDate 2008-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008003291-A
titleOfInvention Resist stripping composition
abstract PROBLEM TO BE SOLVED: To peel off a resist and an antireflection film in a substrate process (Front End of Line) in semiconductor manufacturing, which has heretofore been performed by a mixed solution (SPM cleaning solution) composed of sulfuric acid and hydrogen peroxide solution. It is low and disadvantageous in terms of cost, and also requires a high-temperature treatment that is dense. In particular, a resist subjected to ion implantation is more difficult to remove than a resist not subjected to ion implantation, and the peelability is insufficient even with an SPM cleaning solution. A resist stripping composition comprising tetramethylammonium hydroxide, ammonia, acetonitrile, dimethyl sulfoxide and water is excellent in resist stripping property, and particularly in stripping property of an ion-implanted resist. [Selection figure] None
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013246441-A
priorityDate 2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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