http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008003291-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bfdf49224a405be1f7b653c56ebad94 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
filingDate | 2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43dcf07eba688c7b93ec043e9601e3fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b47790e96f343a16ffab0eeea3508a11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bc82386b14853f52157e740541d67e4 |
publicationDate | 2008-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2008003291-A |
titleOfInvention | Resist stripping composition |
abstract | PROBLEM TO BE SOLVED: To peel off a resist and an antireflection film in a substrate process (Front End of Line) in semiconductor manufacturing, which has heretofore been performed by a mixed solution (SPM cleaning solution) composed of sulfuric acid and hydrogen peroxide solution. It is low and disadvantageous in terms of cost, and also requires a high-temperature treatment that is dense. In particular, a resist subjected to ion implantation is more difficult to remove than a resist not subjected to ion implantation, and the peelability is insufficient even with an SPM cleaning solution. A resist stripping composition comprising tetramethylammonium hydroxide, ammonia, acetonitrile, dimethyl sulfoxide and water is excellent in resist stripping property, and particularly in stripping property of an ion-implanted resist. [Selection figure] None |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013246441-A |
priorityDate | 2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.