| abstract |
A method for plasma ion implantation of a substrate includes a process chamber, a source for forming a plasma in the process chamber, a platen holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma to the substrate. A plasma ion implantation system is provided, and a new coating film, similar to the composition of the deposited film resulting from plasma ion implantation of the substrate, is deposited on the inner surface of the process chamber before forming the new coating film, and one or more Clean the inner surface of the process chamber by removing the old film using an activated cleaning precursor, perform plasma ion implantation on the substrate according to the plasma ion implantation process, and clean the inner surface of the process chamber To do and follow new coatings Te comprising repeating the step of performing plasma ion implantation for one or more substrates. |