| abstract |
Embodiments in accordance with the present invention relate to a multi-step curing process for chemical vapor deposited low dielectric constant materials. In certain embodiments, a combination of electron beam radiation and heat exposure steps may be employed to control the selective degasification of the porogen incorporated into the membrane, resulting in the formation of nanopores. According to one specific embodiment, the low dielectric constant layer resulting from the reaction of the silicon-containing component with the non-silicon-containing component characterizing the unstable group is cured by the initial application of thermal energy followed by the application of radiation in the form of an electron beam. May be. [Selection] Figure 6 |