| abstract |
An active layer having a high gain is easily obtained at a low production cost. In the semiconductor crystal stacked structure 20 of the surface emitting semiconductor laser, reference numeral 21 denotes an n-type contact layer made of n-type GaN, and reference numeral 24 denotes a p-type layer made of p-type AlGaN. In this surface-emitting type semiconductor laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of a dielectric are stacked above and below the InGaN active layer 23, respectively. A vertical reflecting surface is formed. That is, a resonator is configured by providing reflective surfaces perpendicular to the z-axis above and below the active layer 23, respectively. Here, the optical distance between the two reflecting surfaces is set to a half integer multiple of the emission wavelength λ. As a result, according to the present invention, a surface emitting semiconductor laser can be manufactured much more easily than in the past. |