| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
2004-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007503730-A |
| titleOfInvention |
Use of spin-on photopatternable interlayer dielectric materials and intermediate semiconductor device structures utilizing the same |
| abstract |
A cap layer that allows a photopatternable coating material to be used in the formation of semiconductor device structures at wavelengths not previously used. The photopatternable coating material is applied as a layer to a semiconductor substrate. The cap layer and the photoresist layer are respectively formed on the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from the first wavelength radiation used to pattern the photoresist layer. When the photopatternable coating material is exposed to radiation of the second wavelength, it is converted into a silicon dioxide-based material. [Selection figure] None |
| priorityDate |
2003-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |