http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007334925-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-147 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-12 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02 |
filingDate | 2006-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c325c37dd370b41f4654f95a9e694e12 |
publicationDate | 2007-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007334925-A |
titleOfInvention | Nonvolatile semiconductor memory device |
abstract | Deterioration of write characteristics of a nonvolatile semiconductor memory device is prevented. A nonvolatile semiconductor memory device according to the present invention includes a plurality of field effect transistor type memory cells, a source bias control circuit, and a drain bias control circuit. The source bias control circuit 10 variably sets the potential VCS of the source line 3 commonly connected to the sources of the plurality of memory cells 2 during the write operation. The drain bias control circuit 20 variably sets the drain potential VD of the plurality of memory cells 2 according to the potential VCS of the source line 3 during the write operation. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011108341-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009163793-A |
priorityDate | 2006-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340 |
Total number of triples: 17.