http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007334925-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-12
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
filingDate 2006-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c325c37dd370b41f4654f95a9e694e12
publicationDate 2007-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007334925-A
titleOfInvention Nonvolatile semiconductor memory device
abstract Deterioration of write characteristics of a nonvolatile semiconductor memory device is prevented. A nonvolatile semiconductor memory device according to the present invention includes a plurality of field effect transistor type memory cells, a source bias control circuit, and a drain bias control circuit. The source bias control circuit 10 variably sets the potential VCS of the source line 3 commonly connected to the sources of the plurality of memory cells 2 during the write operation. The drain bias control circuit 20 variably sets the drain potential VD of the plurality of memory cells 2 according to the potential VCS of the source line 3 during the write operation. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011108341-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009163793-A
priorityDate 2006-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340

Total number of triples: 17.