http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007324281-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
filingDate | 2006-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d3c297b11dfd81d2f783f74cc61088 |
publicationDate | 2007-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007324281-A |
titleOfInvention | Ferroelectric capacitor, ferroelectric capacitor manufacturing method, ferroelectric memory |
abstract | A ferroelectric capacitor excellent in reliability and a method for manufacturing the same are provided. A ferroelectric capacitor includes a substrate, a first electrode formed above the substrate, and a Pb (Zr, Ti) O 3 formed above the first electrode. The first ferroelectric layer 24 made of a complex oxide represented by the following formula, and the complex represented by Pb (Zr, Ti) 1-x Nb x O 3 formed above the first ferroelectric layer 24 A second ferroelectric layer 26 made of an oxide and a second electrode 30 formed above the second ferroelectric layer 26 are included. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008124274-A |
priorityDate | 2006-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.