| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-06 |
| filingDate |
2006-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c325c37dd370b41f4654f95a9e694e12 |
| publicationDate |
2007-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007323760-A |
| titleOfInvention |
Nonvolatile semiconductor memory device and test method thereof |
| abstract |
In a nonvolatile semiconductor memory device, a defective memory cell is accurately detected at a test stage. A test method of a nonvolatile semiconductor memory device according to the present invention includes: (A) a step of erasing a memory cell by an FN method; and (B) after the step (A), the memory cell is erased by an FN method. Writing back. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011008878-A |
| priorityDate |
2006-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |