| abstract |
When dividing a semiconductor substrate having a diaphragm structure or a beam structure in which a part of a semiconductor substrate, such as a MEMS, is divided into individual semiconductor devices, the processing tact is improved without degrading the quality of the division. A semiconductor substrate, a semiconductor device, and a method for manufacturing the semiconductor device are provided. In a semiconductor substrate, a plurality of semiconductor devices having a diaphragm structure are formed in a grid shape in a vertical direction and a horizontal direction, and among orthogonal dividing lines that individually divide each semiconductor device, A V-groove 3 is formed by anisotropic etching continuously only on one parallel dividing line 4. [Selection] Figure 2 |