| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38b04dac5e5700071e574cb587f8e099
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_30208fce9ca36e03cb3cb8a1259170bc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate |
2007-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf4cc5c84d7b199cc9d8dfcea1ac6edb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9ba73e9c78feb4fa5b2a719457dc170
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c09da57fc4f9973f68446991980b73a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc60a2ba2dcf20ae22b44130deca0f41 |
| publicationDate |
2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007300070-A |
| titleOfInvention |
Etching composition for polishing semiconductor wafer, method for producing polishing composition using the same, and polishing method |
| abstract |
Use for mirror polishing of semiconductor wafer planes and edge portions where good surface roughness can be obtained while suppressing the remaining of abrasive grains (particle generation) on the surface of a semiconductor wafer and maintaining a high polishing rate. An etching solution composition for polishing a semiconductor wafer and a method for producing a polishing composition using the same are provided. An aqueous solution having a buffer solution composition in which a weak acid having a logarithmic value (pKa) of an acid dissociation constant at 25 ° C. of 8.0 to 12.5 and a quaternary ammonium is combined, or an inverse of an acid dissociation constant at 25 ° C. Is an aqueous solution having a buffer solution composition in which a weak acid having a pKa value of 8.0 to 12.5 and quaternary ammonium and potassium is combined, and has a buffering action between pH 9.5 and 12 when diluted 100 times. An etching liquid composition for polishing a semiconductor wafer, comprising: [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102618174-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009188058-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012064938-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015051497-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102775915-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015528835-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102449730-A |
| priorityDate |
2006-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |