http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007299953-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
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filingDate 2006-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2462889f87382b2f87713c205799295f
publicationDate 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007299953-A
titleOfInvention Semiconductor light emitting device and manufacturing method thereof
abstract PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of improving the light extraction efficiency without reducing the reliability of the semiconductor light emitting element, and capable of being manufactured at a low cost without requiring a large-scale device, and a manufacturing method thereof. To do. Light from a light emitting element body 20 is incident on a needle crystal array 21, is transmitted through the needle crystal array 21, and is emitted to the outside. The acicular crystal array 21 is formed by crystal growth by a liquid phase method. The light emitting element body 20 is formed with a refractive index smaller than the refractive index of the portion where the light extraction surface is formed, and the needle-like crystal body 22 is formed so as to be oriented in a direction perpendicular to the light extraction surface. The plurality of needle-like crystal bodies 22 function as a diffraction grating, and are incident on the interface between the needle-like crystal array body 21 and the medium on the side from which light is emitted from the needle-like crystal array body 21 at an angle greater than the critical angle. + 1st order or −1st order diffracted light of the light to be emitted can be emitted. [Selection] Figure 1
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