| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cacdfad87707f3652d4d2a5c13b892c4 |
| publicationDate |
2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007299796-A |
| titleOfInvention |
Manufacturing method of semiconductor light emitting device |
| abstract |
A method of manufacturing a semiconductor light emitting device capable of reducing damage to an active region is provided. First, a group III-V compound semiconductor layer 16a is formed on a group III-V compound semiconductor substrate 12. Next, an etching mask M is formed on the III-V compound semiconductor layer 16a. Next, the III-V compound semiconductor layer 16a is dry-etched using the etching mask M, thereby forming a plurality of recesses 44. Next, the active region 18 made of a III-V compound semiconductor is embedded in the recess 44 using the etching mask M. [Selection] Figure 7 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011517852-A |
| priorityDate |
2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |