http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007297715-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_755326c3256ca01dfa89196823ddb1a1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2007-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ca4e5d110b670e821020601ae975476 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_640a7f4766b02b141ad680d2e92c60a6 |
| publicationDate | 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007297715-A |
| titleOfInvention | Method for manufacturing silicide target for forming gate oxide film having excellent embrittlement resistance |
| abstract | A suitable form of ZrO 2 · SiO 2 or HfO 2 · SiO 2 film can be used as a high dielectric gate insulating film having a characteristic alternative to the SiO 2 film, rich in embrittlement-resistant A method for manufacturing a silicide target is provided. SOLUTION: A metal hydride (M) powder and a Si powder are prepared and mixed in a molar ratio of 1: 0.8 to 1: 1.2, then baked, and dehydrogenated and silicided by heating at the time of calcination. The obtained silicide powder is pulverized and sintered, and free Si is not present, and the relative density is 99% or more of MSi 0.8-1.2 (M: Zr, A sintered body made of Hf) is manufactured. A silicide target for forming a gate oxide film having excellent embrittlement resistance can be obtained. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008291366-A |
| priorityDate | 2000-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.