http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007296337-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dcf93c959507d6fbadd9630d5eda544 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14665 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B6-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 |
| filingDate | 2007-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f46a6997579a519326502657943488d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c19a98bcf2db3716b6d246acc5a16d71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42a06c85c5161d796d0b3e54c40ad4e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80e6a6a098d24e6cc3fc8f874a3ae9fc |
| publicationDate | 2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007296337-A |
| titleOfInvention | Amorphous selenium flat panel X-ray imager for tomosynthesis and static imaging |
| abstract | PROBLEM TO BE SOLVED: To provide an improved X-ray imaging technique using a digital flat panel X-ray imager. A flat panel X-ray imager is provided that reduces ghost effects and is provided with overvoltage protection due to the proper leakage current characteristics of the thin film transistor array. An upper electrode made of a suitable material is provided directly above the charge generator layer based on amorphous selenium, allowing charge transport across the layer, thereby reducing ghosting. Alternatively, a non-insulating organic layer can be provided between the upper electrode and the charge generation layer. The thin film transistor rises relatively slowly with a voltage across the transistor in a range that matches exposure through the object being imaged, but the corresponding region of the charge generator layer is larger in X-rays. Even when receiving the quantity, it has a leakage current that rises at a sufficiently high rate in a higher range to provide protection. A voltage is applied to the upper electrode. This voltage can be in the range of 500V to 2000V. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101257699-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012509735-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8824628-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9322931-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8477901-B2 |
| priorityDate | 2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.