http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007294610-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-12105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-24137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-92244
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-97
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12
filingDate 2006-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b466868b17ad11487c1e01da20559489
publicationDate 2007-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007294610-A
titleOfInvention Manufacturing method of semiconductor device
abstract A semiconductor device and a manufacturing method of an SiP type capable of forming a buffer layer by contact printing and further realizing formation of an alignment mark that realizes automation of dicing for reducing manufacturing cost at a low cost. provide. A method of manufacturing a semiconductor device packaged including a semiconductor, wherein an insulating resin layer (16, 16) stacked on a substrate is formed in a semiconductor device formation region SD of the substrate divided by a scribe line SL. 20) and a rewiring layer (17, 18, 21, 23) embedded in the insulating layer are formed, and the substrate 10 is cut along the scribe line SL. Here, when the rewiring layer is formed, the alignment mark 23a used in the step of cutting the substrate is formed on the scribe line SL, and when the substrate 10 is cut, the substrate 10 is positioned with reference to the alignment mark 23a. Together, the substrate 10 is cut. [Selection] Figure 9
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9825003-B2
priorityDate 2006-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426320336
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11116966

Total number of triples: 28.