| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069a92549123806a5d654dc036a676e9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49156
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0209 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D15-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D15-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D21-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D15-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 |
| filingDate |
2006-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6a72a1ac5594ca99a37e239b99fb669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e92f042143ee6429f2ec8e4a7d3da20c |
| publicationDate |
2007-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007291469-A |
| titleOfInvention |
Substrate processing method, semiconductor device, and substrate processing apparatus |
| abstract |
The present invention provides a substrate processing method, a semiconductor device, and a substrate processing apparatus capable of significantly reducing a processing time when a non-through hole formed in a substrate is filled with a conductor by a plating method and reducing a manufacturing cost of a semiconductor device. A substrate processing method in which a non-through hole 100 is formed in a substrate W and a conductor (plating film 105) is filled in the non-through hole 100 by a plating method. The plating solution Q contains solid particles 103. When electrolytic plating is performed with the plating solution Q, the solid particles 103 are taken into the plating film 105 simultaneously with the formation of the plating film 105, and the volume of the plating film 105 is increased. [Selection] Figure 1 |
| priorityDate |
2006-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |