| abstract |
A method for growing a nitride single crystal having good crystallinity at a high rate is provided. The temperature and pressure in an autoclave containing a seed, a solvent containing a nitrogen element, a raw material containing a group 13 metal element of the periodic table, and a mineralizer in an amount of 1.5 to 15 mol% of the solvent are determined. The nitride single crystal is grown on the surface of the seed by an ammonothermal method while controlling the solvent to be in a supercritical state and / or a subcritical state. [Selection figure] None |