http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007288218-A

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filingDate 2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_425b690feac89a75e16d208684fc246c
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publicationDate 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2007288218-A
titleOfInvention Semiconductor laser
abstract PROBLEM TO BE SOLVED: To provide a highly reliable ridge waveguide type optical element, particularly a semiconductor laser element structure, which can be realized by a very simple manufacturing method, and has a low threshold current and an excellent high temperature operation. Provide a manufacturing method. A ridge waveguide optical device (semiconductor) in which impurities are added to a barrier layer of an optically active region (for example, a laser active region) having a quantum well structure to reduce lateral diffusion of carriers in the active layer. Laser). The present invention is applied to an optical transmission module and an optical communication system using the ridge waveguide type optical element having the modulation doped multiple quantum well active layer structure. [Effect] In addition to dramatically improving the device performance and yield of the semiconductor light emitting device, it is possible to easily realize high performance and low cost of an optical module and an optical communication system to which the device is applied. [Selection] Figure 1
priorityDate 2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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