http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007287945-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2006-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02e8b02be994748e394cce158536ba82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab8970cfc9b86ef9ceb3db8c4bb44952 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4a3591bf22ad019a36e39e83b3ef5fc |
| publicationDate | 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007287945-A |
| titleOfInvention | Thin film transistor |
| abstract | A thin film transistor capable of suppressing not only the kink effect but also the channel length modulation effect is realized. In the first and second gate electrodes 6a and 6b constituting the gate electrode 6, the gate length W6b of the second gate electrode 6b is made shorter than the gate length W6a of the first gate electrode 6a, and The gate length W6b of the second gate electrode 6b is configured to be short enough to generate the short channel effect. Thereby, the threshold voltage Vthb of the second transistor corresponding to the second gate electrode 6b can be made lower than the threshold voltage Vtha of the first transistor corresponding to the first gate electrode 6a. When the same voltage is applied to the first and second gate electrodes 6a and 6b, electric field concentration in the channel on the drain side is suppressed. As a result, the channel length modulation effect can be mitigated. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010134486-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008135605-A |
| priorityDate | 2006-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.