http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007287832-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2006-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9cc9ccffa31b8a092f6edd7dcb7a989 |
| publicationDate | 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007287832-A |
| titleOfInvention | Chemical mechanical polishing method |
| abstract | Disclosed is a polishing method for achieving high polishing rate and low dishing under low pressure conditions in chemical mechanical polishing. (A) At least one corrosion selected from the group consisting of at least one organic acid selected from compounds represented by formula (I), (b) colloidal silica particles, (c) imidazole compounds and triazole compounds. An abrasive, (d) a nonionic surfactant, and (e) hydrogen peroxide, having a latent etching rate of 20 nm / min or more and a normal etching rate of 5 nm / min or less, a metal polishing liquid to be polished When the polishing pressure is 1.0 psi or less and the polishing pad and the surface to be polished are brought into contact with each other while being moved relative to each other, the polishing rate is 300 nm / min or more and the average frictional resistance is 0. A chemical mechanical polishing method characterized by being 5 or less. [Chemical 1] [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007269918-A |
| priorityDate | 2006-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 83.