| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-146 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate |
2006-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fc873c420032407403583685751ea8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_817f940401b789132740205f97c4aa0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b89d830ab5128f7706f85157699ac6c |
| publicationDate |
2007-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007279664-A |
| titleOfInvention |
Positive resist composition and pattern forming method using the same |
| abstract |
A positive resist composition used in semiconductor manufacturing processes such as IC, circuit boards such as liquid crystals and thermal heads, and other photofabrication processes and a pattern forming method using the same Provided are a positive resist composition which is improved in pattern collapse due to exposure and immersion exposure, and has excellent water followability in immersion exposure, and a pattern forming method using the same. (A) a resin whose solubility in an alkaline developer is increased by the action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or radiation; and (C) a silicon-containing repeating unit having a specific structure. A positive resist composition containing a resin that is stable to acids and insoluble in an alkaline developer and (D) a solvent, and a pattern forming method using the same. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9261780-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009244426-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011028231-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011145703-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012159830-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8632938-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8916330-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012185488-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9040221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009244424-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5713012-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8765355-B2 |
| priorityDate |
2005-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |