http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007274011-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate | 2007-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22fe8fafef30be71af7d3c71445b9527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_926d580c1b30d6daa1f0e0f76e43d62b |
publicationDate | 2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2007274011-A |
titleOfInvention | Semiconductor substrate |
abstract | A method of manufacturing a semiconductor substrate capable of forming a silicon thin film with good crystallinity and uniformity on an insulating film having an arbitrary large area, and a high-performance semiconductor element using the semiconductor substrate. A method for manufacturing a semiconductor device is provided. An amorphous or polycrystalline silicon layer formed on a silicon substrate 1 via an insulating film (base 3) is irradiated with a rectangular ultraviolet beam in a pulsed manner, thereby forming a crystal with unevenness. Forming a siliconized film (silicon thin film 5) and polishing to flatten the surface state of the crystallized silicon film, and the amount of movement of the ultraviolet beam irradiation position and the width of the ultraviolet beam A crystallized silicon film composed of a group of substantially rectangular silicon single crystal particles arranged in a lattice shape is formed by setting the ratio of the movement amount to an appropriate value. [Selection] Figure 1 |
priorityDate | 2007-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.